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US 2019/0198458 A1Published application
Radio-frequency isolation cavities and cavity formation
AssigneeSkyworks Solutions, Inc.
InventorsDavid T. PETZOLD, David Scott WHITEFIELD
Life of this patent
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Abstract
A method for fabricating a radio-frequency device involves providing a semiconductor wafer including a transistor device, applying a form of sacrificial material on the semiconductor wafer, applying an interface material over the form of sacrificial material, and removing at least a portion of the form of sacrificial material to form a cavity at least partially covered by the interface material.
Claims22
A method for fabricating a radio-frequency device, the method comprising:
- providing a semiconductor wafer including a transistor device;
- applying a form of sacrificial material on the semiconductor wafer;
- applying an interface material over the form of sacrificial material;
- and
- removing at least a portion of the form of sacrificial material to form a cavity at least partially covered by the interface material.
2 more elements
A radio-frequency device comprising:
- a semiconductor wafer including a transistor device;
- a patterned form of sacrificial material applied on the semiconductor wafer;
- and
- an interface layer covering at least a portion of the form of sacrificial material.
1 more element
A semiconductor device comprising:
- a semiconductor wafer including a transistor device;
- a plurality of patterned forms of sacrificial material applied on the semiconductor wafer;
- and
- an interface layer covering the plurality of forms of sacrificial material.
1 more element
Dependencies are inferred from the claim text.