Methods of embedding magnetic structures in substrates
AssigneeIntel Corporation
InventorsSai Vadlamani, Prithwish Chatterjee, Robert A. May, Rahul S. Jain, Lauren A. Link, Andrew J. Brown, Kyu Oh Lee, Sheng C. Li
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Abstract
Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.
Claims25
A microelectronic package structure, comprising:
- a substrate comprising a dielectric material;
- a first interconnect structure within the dielectric material;
- a magnetic material, wherein a first side of the magnetic material is on a first side of the first interconnect structure;
- and
- a second interconnect structure within the magnetic material, wherein;
- a first side of the second interconnect structure is on the first side of the first interconnect structure;
- and
- a second side of the second interconnect structure is coplanar with a second side of the magnetic material.
A microelectronic package structure comprising:
- a substrate comprising a dielectric material;
- a magnetic material within the dielectric material, the magnetic material comprising a first side and a second side;
- a first interconnect structure on a first side of the magnetic material, wherein a first side of the first interconnect structure is within the magnetic material, and wherein a second side of the first interconnect structure is on the dielectric material;
- and
- a second interconnect structure on the first the side of first interconnect structure, wherein the second interconnect structure is at least partially embedded within the magnetic material.
The microelectronic package structure of example 10, wherein a first sidewall of
- the magnetic material is directly on the dielectric material, and a second sidewall of the magnetic material is directly on the dielectric material.
A method of forming a microelectronic package structure, the method comprising:
- forming a first interconnect structure on a dielectric material of a substrate;
- selectively forming a magnetic material on a surface of the first interconnect structure;
- forming an opening in the magnetic material;
- and
- forming a second interconnect structure in the opening.
Dependencies are inferred from the claim text.