Power semiconductor module device and power semiconductor module manufacturing method
AssigneeWaseda University
InventorKohei Tatsumi
Life of this patent
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Abstract
A power semiconductor module device includes: a plurality of semiconductor elements that are arranged at intervals and flush with each other on a plane; an insulating support that fixes the semiconductor elements; a first thick-film plating layer that is formed as a first-surface-side electrode that electrically connects the semiconductor elements to each other on at least one surface of a front surface side and a rear surface side. The first thick-film plating layer supports the semiconductor elements from at least one of an upper direction and a lower direction.
Claims19
A power semiconductor module device comprising:
- a plurality of semiconductor elements that are arranged at intervals and flush with each other on a plane;
- an insulating support that fixes the semiconductor elements;
- a first thick-film plating layer that is formed as a first-surface-side electrode that electrically connects the semiconductor elements to each other on at least one surface of a front surface side and a rear surface side, wherein
- the first thick-film plating layer supports the semiconductor elements from at least one of an upper direction and a lower direction.
A power semiconductor module manufacturing method comprising:
- arranging a plurality of semiconductor elements at intervals with being flush with each other on an arrangement substrate;
- embedding an insulating material in between the arranged semiconductor elements;
- forming a resist groove in a wiring portion of each semiconductor element;
- forming a plating seed on a first surface side to perform a thick-film plating treatment;
- separating the arrangement substrate;
- forming a second-surface-side electrode that electrically connects the semiconductor elements to each other on a second surface side where the arrangement substrate has been separated;
- and
- performing dicing in a unit of module.
A power semiconductor module manufacturing method comprising:
- forming, in an insulating substrate, a through hole having a size larger than that of a semiconductor element to be embedded;
- attaching a conductive wiring metal plate to at least a region other than the through hole on both sides of the insulating substrate;
- fitting the semiconductor element into the through hole;
- embedding an insulating material in between the insulating substrate and the semiconductor element inside the through hole;
- forming a plating seed on a first surface side to perform a thick-film plating treatment;
- joining a conductive wiring metal plate and an electrode of the semiconductor element by plating on a second surface side, the conductive wiring metal plate having a connection surface connected to the electrode of the semiconductor element via an edge;
- and
- performing dicing in a unit of module.
A power semiconductor module manufacturing method comprising:
- forming a through hole having a size larger than that of a semiconductor element to be embedded, in a substrate on both sides of which a conductive wiring metal plate is formed;
- fitting the semiconductor element into the through hole;
- embedding an insulating material in between the substrate and the semiconductor element inside the through hole;
- forming a plating seed on a first surface side and a second surface side to perform a thick-film plating treatment;
- and
- performing dicing in a unit of module.
Dependencies are inferred from the claim text.