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US 2019/0198426 A1Published application
Semiconductor device having a structure for insulating layer under metal line
AssigneeSamsung Electronics Co., Ltd.
InventorsMin Jun CHOI, Doo Won KWON, Kwan Sik KIM, Tae Young SONG, Sung Hyun YOON
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Abstract
A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.
Claims20
A semiconductor device comprising:
- a via plug on a substrate;
- and
- a metal layer at an end of the via plug, the metal layer connected to an interconnection layer,
- wherein an insulating structure is under the metal layer, and
- the insulating structure has a different layered structure according to a positional relationship with the metal layer.
2 more elements
A semiconductor device comprising:
- a semiconductor structure;
- a via plug formed to pass through at least partially the semiconductor structure;
- and
- a metal layer at an end of the via plug,
- wherein a bottom surface adjacent to a side surface of the metal layer has a different depth according to a distance from the side surface.
2 more elements
A semiconductor device comprising:
- a substrate on which a photodiode is formed;
- an insulating layer on the substrate;
- a via plug passing through at least a portion of the substrate;
- and
- a metal layer formed on the via plug,
- wherein an insulating structure comprising one or more layered structures is under the metal layer.
3 more elements
Dependencies are inferred from the claim text.