Method of inspecting semiconductor device

A method of inspecting a semiconductor device, the method comprising:

• loading a wafer onto a stage of an inspection device, the wafer including at least one deep trench;
• forming a first cut surface by performing first milling on the wafer in a first direction;
• first-rotating the stage by a first angle subsequent to the forming a first cut surface;
• performing rock-milling in a second direction, the second direction being at an angle to the first direction, subsequent to first-rotating the stage;
• obtaining first image data by taking an SEM photograph of the first cut surface in the first direction;
• second-rotating the stage by 180 degrees;
• forming a second cut surface by performing second milling in a third direction opposite to the first direction subsequent to the second-rotating the stage;
• performing rock-milling in a fourth direction, the fourth direction being at an angle to the third direction, subsequent to the second-rotating the stage;
• obtaining second image data by taking an SEM photograph of the second cut surface in the third direction;
• analyzing a degree of bending of the deep trench based on the first image data and the second image data;
• and
• providing the semiconductor device meeting a condition based on results of the analyzing.

A method of inspecting a semiconductor device, the method comprising:

• setting at least one target place on a wafer, the target place including at least one deep trench;
• obtaining first image data of a first cut surface of the target place in a first direction;
• obtaining second image data of a second cut surface of the target place in a second direction, the second direction being opposite to the first direction;
• obtaining a first CD value for a width of a cross-section of the deep trench in the first cut surface and a position of a first center point of the cross-section of the deep trench in the first cut surface, the first CD value and the position of the first center point being values measured in a horizontal direction that is perpendicular to a depth direction of the deep trench;
• obtaining a second CD value for a width of a cross-section of the deep trench in the second cut surface and a position of a second center point of the cross-section of the deep trench in the second cut surface, the second CD value and the position of the second center point being values measured in the horizontal direction;
• analyzing a degree of bending of the deep trench based on the first CD value, the second CD value;
• and
• providing the semiconductor device meeting a condition based on results of the analyzing.