Simplified block patterning with wet strippable hardmask for high-energy implantation
AssigneeInternational Business Machines Corporation
InventorsEkmini Anuja De Silva, Indira Seshadri, Romain Lallement, Nelson Felix
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Abstract
Semiconductor devices and methods of forming the same include forming a wet-strippable hardmask over semiconductor fins. The wet-strippable hardmask is anisotropically etched away in a first device region. At least one semiconductor fin is doped in the first device region. The wet-strippable hardmask is isotropically etched away in a second device region. Semiconductor devices are formed from the fins in the first and second device regions.
Claims20
A method for forming a semiconductor device, comprising:
- forming a wet-strippable hardmask over a plurality of semiconductor fins from a material selected from the group consisting of a carbon oxide comprising a metal and a carbon oxynitride comprising a metal;
- anisotropically etching away the wet-strippable hardmask in a first device region;
- doping at least one semiconductor fin in the first device region;
- isotropically etching away the wet-strippable hardmask in a second device region;
- and
- forming semiconductor devices from the plurality of fins in the first and second device regions.
(canceled)
A method for forming a semiconductor device, comprising:
- forming a wet-strippable hardmask over a plurality of semiconductor fins, the wet-strippable hardmask being formed from a material selected from the group consisting of a metallic carbon oxide and a metallic carbon oxynitride comprising a metallic element selected from the group consisting of titanium, hafnium, tungsten, and zirconium;
- anisotropically etching away the wet-strippable hardmask in a first device region;
- doping at least one semiconductor fin in the first device region;
- isotropically etching away the wet-strippable hardmask in a second device region with a wet chemical etch;
- and
- forming semiconductor devices from the plurality of fins in the first and second device regions.
A method for forming a semiconductor device, comprising:
- forming an organic planarizing layer over a plurality of semiconductor fins;
- forming a wet-strippable hardmask over the organic planarizing layer, the wet-strippable hardmask being formed from a material selected from the group consisting of a metallic carbon oxide and a metallic carbon oxynitride comprising a metallic element selected from the group consisting of titanium, hafnium, tungsten, and zirconium;
- anisotropically etching away the wet-strippable hardmask in a first device region;
- anisotropically etching away the organic planarizing layer in the first region;
- doping at least one semiconductor fin in the first device region;
- isotropically etching away the wet-strippable hardmask in a second device region with a wet chemical etch;
- removing the organic planarizing layer in the second device region;
- and
- forming semiconductor devices from the plurality of fins in the first and second device regions.
Dependencies are inferred from the claim text.