Electrically conductive via(s) in a semiconductor substrate and associated production method
AssigneeX-Fab Semiconductor Foundries AG
InventorsRoy Knechtel, Sophia Dempwolf, Daniela Guenther, Uwe Schwarz
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AssigneeX-Fab Semiconductor Foundries AG
InventorsRoy Knechtel, Sophia Dempwolf, Daniela Guenther, Uwe Schwarz
Estimating the term…
A method is provided for producing at least one electrical via in a substrate, the method comprising: producing a protective layer over a component structure which has been produced or is present on a front side of the substrate; forming at least one contact hole which extends from a surface of a backside of the substrate to a contact surface of the component structure; forming a metal-containing and thus conductive lining in the at least one contact hole creating a hollow electrically conductive structure in the at least one contact hole; and applying a passivation layer over the backside of the substrate, the passivation layer spanning over the hollow electrically conductive structure for forming the at least one electrical via. Also provided is a micro-technical component comprising at least one electrical via.
A method of or for producing at least one electrical via (150, 150′) in a substrate (3), the method comprising the following steps:
A micro-technical component comprising a substrate (3) and having a front side (2) and a backside (1), wherein
21-28. (canceled)
Dependencies are inferred from the claim text.