Selective Deposition of Metal-Organic Frameworks

A method of forming a semiconductor device comprising a substrate structure by forming a low-k dielectric film selectively on exposed dielectric locations in a substrate, wherein the substrate structure is configured to interconnect individual devices of the semiconductor device, and wherein the method comprises:

• selectively depositing a metal-containing film, using an area-selective deposition process, on the exposed dielectric locations using one or more deposition cycles;
• and
• providing, at least once, a vapor of at least one organic ligand to the deposited metal-containing film resulting in a gas-phase chemical reaction thereby obtaining a metal-organic framework which is the low-k dielectric film, wherein the low-k dielectric film has gaps on locations where no metal-containing film was deposited.