Removal method and processing method
AssigneeTokyo Electron Limited
InventorsTakeshi ITATANI, Tadahiro ISHIZAKA, Kandabara TAPILY, Kai-Hung YU, Wanjae PARK
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsTakeshi ITATANI, Tadahiro ISHIZAKA, Kandabara TAPILY, Kai-Hung YU, Wanjae PARK
Estimating the term…
A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BCl3 gas or a BCl3 gas plasma generated by introducing BCl3 gas, stopping introduction of the BCl3 gas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.
A removal method for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber, the removal method comprising process steps of:
A processing method for embedding a metal wiring in a recess, the processing method comprising steps of:
Dependencies are inferred from the claim text.