Methods For Controllable Metal And Barrier-Liner Recess

A processing method comprising:

• providing a substrate comprising a dielectric material with at least one feature formed thereon, the at least one feature having at least one sidewall and a bottom, a distance from a surface of the dielectric material to the bottom of the feature defining a depth of the feature;
• passivating the dielectric material at the sidewall of the feature to form a passivated dielectric layer;
• forming a barrier layer on the at least one sidewall on the passivated dielectric layer and the bottom of the at least one feature;
• depositing a metal layer in the feature to fill the at least one feature;
• and
• removing a portion of the metal layer and the barrier layer to a predetermined depth and remove the barrier layer from the passivated dielectric layer.

A processing method comprising:

• providing a substrate comprising a dielectric material, the substrate having at least one feature with at least one sidewall and a bottom defining a volume, a barrier layer formed on the at least one sidewall and the bottom and a metal layer formed on the barrier layer to fill the volume of the at least one feature;
• etching the metal layer to expose a portion of the barrier layer within the feature;
• etching the exposed portion of the barrier layer to remove the exposed portion of the barrier layer;
• and
• repeating the etching of the metal layer and the etching of the barrier layer until a predetermined depth of the metal layer has been removed.