Method for manufacturing bonded soi wafer

Abstract

A method for manufacturing a bonded SOI wafer including a step of performing a heat treatment to each bonded SOI wafer having an oxide film on a back surface thereof in an argon atmosphere to flatten a front surface of an SOI layer, wherein, at the time of performing the heat treatment in the argon atmosphere in a batch processing heat treatment furnace, a silicon wafer is arranged as a dummy wafer between the adjacent bonded SOI wafers housed in the batch processing heat treatment furnace to perform the heat treatment. Consequently, there is the method for manufacturing an SOI wafer which enables suppressing an increase in LPDs at the step of performing the heat treatment to a bonded SOI wafer having an oxide film on a back surface thereof in an argon atmosphere in a batch processing heat treatment furnace to flatten a front surface of an SOI layer.

Dependencies are inferred from the claim text.