Semiconductor device with two-part insulation structure within non-active region
AssigneeVanguard International Semiconductor Corporation
InventorsHsin-Chih LIN, Shin-Cheng LIN, Yung-Hao LIN
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Abstract
A method for forming a semiconductor device is provided. A substrate is provided. An epitaxial layer is formed on the substrate. An insulation region and an active region are defined on the upper surface of the epitaxial layer. An insulation structure is formed within the insulation region by an ion implantation process and an etching process, wherein the insulation structure includes a first insulation structure and a second insulation structure. A gate is formed on the epitaxial layer and is disposed within the active region. A source and a drain are formed on opposite sides of the gate and within the active region. A semiconductor device is also provided.
Claims20
A method for forming a semiconductor device, comprising:
- providing a substrate;
- forming an epitaxial layer on the substrate;
- defining an insulation region and an active region on an upper surface of the epitaxial layer;
- forming an insulation structure within the insulation region by an ion implantation process and an etching process, wherein the insulation structure comprises a first insulation structure and a second insulation structure;
- forming a gate on the epitaxial layer and within the active region;
- and
- forming a source and a drain on opposite sides of the gate and within the active region.
A semiconductor device, comprising:
- a substrate;
- an epitaxial layer, disposed on the substrate, wherein the epitaxial layer has an insulation region and an active region;
- an insulation structure, comprising a first insulation structure and a second insulation structure, disposed within the insulation region;
- a gate, disposed on the epitaxial layer and within the active region;
- and
- a source and a drain, disposed on opposite sides of the gate and within the active region;
- wherein the first insulation structure and the second insulation structure are different from each other in composition, and the second insulation structure penetrates the first insulation structure.
Dependencies are inferred from the claim text.