Mask-integrated surface protective tape
AssigneeFurukawa Electric Co., Ltd.
InventorsYusuke GOTO, Hirotoki YOKOI
Life of this patent
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Abstract
A mask-integrated surface protective tape for production of semiconductor chips, with the production containing steps (a) to (d), which tape comprises a base film and a mask material layer provided thereon, wherein a wetting tension of the base film on the side from which the mask material layer has been peeled is from 20.0 mN/m to 48.0 mN/m, and wherein a surface roughness Ra of the base film on the side from which the mask material layer has been peeled is within a range from 0.05 μm to 2.0 μm when measured in conformity to JIS B0601, (a) a specific laminating step; (b) a specific peeling step; (c) a specific plasma-dicing step; and (d) a specific ashing step.
Claims10
A mask-integrated surface protective tape that can be used for production of semiconductor chips, with the production containing the following steps (a) to (d), which tape comprises a base film and a mask material layer provided on the base film, wherein a wetting tension of the base film on the side from which the mask material layer has been peeled is 20.0 mN/m or more and 48.0 mN/m or less, and wherein a surface roughness Ra of the base film on the side from which the mask material layer has been peeled is within a range of 0.05 μm or more and 2.0 μm or less when measured in conformity to JIS B0601,
- (a) a step of, in the state of having laminated the mask-integrated surface protective tape on the side of a patterned surface of a semiconductor wafer, grinding the backing-face side of the semiconductor wafer;
- laminating a wafer fixing tape on the backing-face side of the ground semiconductor wafer;
- and supporting and fixing the wafer to a ring flame;
- (b) a step of, after peeling the base film of the mask-integrated surface protective tape, thereby to expose the mask material layer on top, forming an opening of a street of the semiconductor wafer by cutting a portion of the mask material layer corresponding to the street of the semiconductor wafer by laser;
- (c) a plasma-dicing step of segmentalizing the semiconductor wafer on the street by a SF6 plasma, thereby singulating the semiconductor wafer into semiconductor chips;
- and
- (d) an ashing step of removing the mask material layer by an O2 plasma.
Dependencies are inferred from the claim text.