Method for controlling semiconductor process
AssigneeSamsung Electronics Co., Ltd.
InventorsSeul Ha MYUNG, Min Joon PARK, Hyo Sung KIM, Kyung Hoon LEE, Jae Hyun LEE
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Abstract
A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.
Claims20
A method of controlling a semiconductor process, the method comprising:
- performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated;
- obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber;
- and
- determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.
A method of controlling a semiconductor process, the method comprising:
- obtaining an electrostatic chuck (ESC) voltage supplied to an ESC on which a wafer is seated, an ESC current detected from the ESC, and bias power supplied to a bias electrode in a chamber, while the chamber is performing a semiconductor process using plasma;
- comparing magnitudes of the ESC voltage, the ESC current, and the bias power with a reference voltage, a reference current, and reference power, respectively;
- and
- when the ESC voltage decreases to be lower than the reference voltage, when the ESC current increases to be higher than the reference current, or when the bias power increases to be higher than the reference power, determining that a discharge has occurred between the wafer and the ESC and interrupting at least one of the ESC voltage and the bias power.
A method of controlling a semiconductor process, the method comprising:
- obtaining an electrostatic chuck (ESC) voltage supplied to an ESC on which a wafer is seated, an ESC current detected from the ESC, and bias power supplied to a bias electrode inside a chamber, while the chamber is performing a semiconductor process using plasma;
- comparing variations of the ESC voltage, the ESC current, and the bias power with first to third reference variations, respectively;
- and
- when the variation of the ESC voltage is higher than the first reference variation, when the ESC current is higher than the second reference variation, or when the variation of the bias power is higher than the third reference variation, determining that a discharge has occurred between the wafer and the ESC and interrupting at least one of the ESC voltage and the bias power.
Dependencies are inferred from the claim text.