High pressure wafer processing systems and related methods

A method for operating a processing system, the method comprises:

• depressurizing a first chamber to equalize a pressure of the first chamber with a pressure of a second chamber;
• loading a substrate on a pedestal of a first chamber by passing the substrate through the second chamber;
• and
• introducing a gas into the first chamber to increase the pressure of the first chamber relative to the pressure of the second chamber.

A semiconductor fabrication apparatus, comprising:

• a central chamber;
• a high-pressure processing system coupled with the central chamber, the high-pressure processing system comprising:
• a first chamber having a support to hold a substrate during processing;
• a second chamber;
• and
• a gas delivery system configured to pressurize and depressurize the first chamber, the gas delivery system comprising:
• an exhaust line passing through a top of the first chamber and a top of the second chamber;
• and
• an input line passing through the top of the first chamber and the top of the second chamber;
• and
• a transfer robot positioned within the central chamber, the transfer robot configured to:
• load the substrate on the support by passing the substrate from the central chamber and through the second chamber.