Method of processing substrate

A method of processing a substrate, comprising:

• providing, within a chamber, the substrate including a patterned region and an etching target region surrounded by a side surface of the patterned region;
• forming an organic film on a surface of the substrate;
• etching the organic film extended on the etching target region such that a portion of the organic film along the side surface of the patterned region is left;
• and
• etching the etching target region by using plasma generated from a processing gas after performing the etching of the organic film,
• wherein the forming of the organic film is performed in a state that the substrate is placed in a processing space within the chamber,
• the forming of the organic film comprises:
• supplying a first gas containing a first organic compound toward the substrate;
• and
• supplying a second gas containing a second organic compound toward the substrate,
• wherein, in the forming of the organic film, an organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound, and the supplying of the first gas and the supplying of the second gas are alternately repeated.

A method of processing a substrate, comprising:

• providing, within a chamber, the substrate including an etching target region and a patterned region provided on the etching target region;
• forming an organic film by polymerization of a first organic compound and a second organic compound on a surface of the substrate;
• and
• etching the etching target region by using plasma generated from a processing gas after performing the forming of the organic film.