Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorsYasuo ASADA, Takehiko ORII, Shinji IRIE, Nobuhiro TAKAHASHI, Ayano HAGIWARA, Tatsuya YAMAGUCHI
Life of this patent
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Abstract
There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.
Claims13
An etching method comprising:
- forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other;
- and
- etching the silicon-containing film by supplying the etching gas.
An etching apparatus comprising:
- a processing container;
- a mounting part provided inside the processing container and configured to mount a substrate on the mounting part, the substrate including a silicon-containing film, a porous film, and a film not to be etched which are sequentially formed adjacent to each other;
- a film-forming gas supply part configured to supply a film-forming gas into the processing container so as to form a blocking film configured to prevent an etching gas for etching the silicon-containing film from passing through each pore of the porous film and prevent the etching gas from being supplied to the film not to be etched;
- and
- an etching gas supply part configured to supply the etching gas into the processing container.
Dependencies are inferred from the claim text.