Manufacturing method of electrode pattern, thin film transistor and manufacturing method thereof, and display panel
AssigneeBoe Technology Group Co., Ltd.
InventorsHaixu LI, Zhanfeng CAO, Qi YAO, Jianguo WANG, Fanna MENG
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Abstract
Provided in an embodiment of the present invention are a manufacturing method of an electrode pattern, a thin film transistor and a manufacturing method thereof, and a display panel. The manufacturing method of an electrode pattern includes: forming a metal thin film; performing processing on the metal thin film to form a partner layer over a surface of the metal thin film, the partner layer being configured to react with a photoresist to form a hydrogen bond; and performing patterning to form an electrode.
Claims20
A manufacturing method of an electrode pattern, comprising:
- forming a metal film;
- forming a partner layer on a surface of the metal film by subjecting the metal film to a treatment, wherein the partner layer is configured to interact with a photoresist to form a hydrogen bond;
- and
- patterning the metal film on the surface of which the partner layer is formed to provide the electrode pattern.
A manufacturing method of a thin film transistor, comprising:
- forming a metal film;
- forming a partner layer on a surface of the metal film by subjecting the metal film to a treatment, wherein the partner layer is configured to interact with a photoresist to form a hydrogen bond;
- and
- patterning the metal film on the surface of which the partner layer is formed to provide an electrode;
- wherein the electrode is at least one of a gate electrode, a first source/drain electrode and a second source/drain electrode of the thin film transistor.
A thin film transistor, comprising:
- a gate electrode, a first source/drain electrode and a second source/drain electrode;
- wherein at least one of the gate electrode, the first source/drain electrode and the second source/drain electrode is an electrode comprising a partner layer and a conductive layer, wherein the conductive layer is covered by the partner layer which is configured to interact with a photoresist to form a hydrogen bond.
Dependencies are inferred from the claim text.