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US 2019/0198340 A1Published application
Semiconductor manufacturing methods for patterning line patterns to have reduced length variation
AssigneeSamsung Electronics Co., Ltd.
InventorsGyeongseop KIM, Kyung Yub JEON, Seul Gi HAN
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Abstract
A method for defining a length of a fin including forming a plurality of first slice walls on a mask material layer, which is provided over the fin, using a plurality of hard mask patterns, providing a plurality of fill mask patterns self-aligned with respect to the plurality of first slice walls to expose one or more select areas between one or more pairs of adjacent ones of the plurality of first slice walls, and providing a trim mask pattern including one or more openings and self-aligned with respect to the plurality of second slice walls to expose one or more of the plurality of first slice walls may be provided.
Claims20
A method for defining a length of a fin that protrudes from a substrate, the method comprising:
- providing a mask material layer on the fin, the fin protruding from the substrate and horizontally extending in a first direction;
- forming a plurality of first slice walls on the mask material layer using a plurality of hard mask patterns, the plurality of first slice walls horizontally extending in a second direction, the second direction crossing the first direction;
- providing a first insulating layer on the plurality of first slice walls and the mask material layer;
- providing a plurality of fill mask patterns on the first insulating layer and to be self-aligned with respect to the plurality of first slice walls to expose one or more select areas between one or more pairs of adjacent ones of the plurality of first slice walls;
- removing the first insulating layer at the exposed one or more select areas, and the plurality of fill mask patterns;
- providing one or more second slice walls between one or more corresponding pairs of the plurality of first slice walls at the exposed one or more select areas, respectively;
- providing a second insulating layer on the first insulating layer, the plurality of first slice walls, and the one or more second slice walls;
- providing a trim mask pattern including one or more openings on the second insulating layer such that the trim mask pattern is self-aligned with respect to the one or more second slice walls to expose one or more of the plurality of first slice walls;
- removing the one or more of the plurality of first slice walls exposed by the trim mask pattern;
- removing the trim mask pattern and the first and second insulating layers;
- patterning the mask material layer using remaining ones of the plurality of first slice walls and the one or more second slice walls to form a plurality of fin cut mask patterns;
- and
- cutting the fin to have a length using the plurality of fin cut mask patterns.
10 more elements
A method for patterning a line shape structure to have a length, the method comprising:
- providing a plurality of line shape structures on a substrate, the plurality of line shape structures horizontally extending in a first direction;
- providing a mask material layer on the plurality of line shape structures;
- providing a first material layer on the mask material layer;
- providing a plurality of first hard mask patterns on the first material layer;
- patterning the first material layer using the plurality of first hard mask patterns to form a plurality of first slice walls, the plurality of first slice walls horizontally extending in a second direction, the second direction crossing the first direction;
- providing a first insulating layer on the plurality of first slice walls and the mask material layer;
- providing a plurality of fill mask patterns on the first insulating layer such that a first side of the plurality of fill mask patterns that extends along the second direction are aligned to central positions of corresponding ones of the plurality of first slice walls, respectively, to expose one or more select areas between one or more pairs of adjacent ones of the plurality of first slice walls;
- removing the first insulating layer at the exposed one or more select areas and the plurality of fill mask patterns;
- providing one or more second slice walls at the exposed one or more select areas;
- providing a second insulating layer on the first insulating layer, the plurality of first slice walls, and the one or more second slice walls;
- providing a trim mask pattern on the second insulating layer, the trim mask pattern including one or more openings on the second insulating layer such that a first side of the one or more openings that extend along the second direction are aligned to central positions of corresponding ones of the one or more second slice walls, respectively to expose one or more of the plurality of first slice walls;
- removing the one or more of the plurality of first slice walls exposed by the trim mask pattern;
- removing the trim mask pattern and the first and second insulating layers;
- patterning the mask material layer using remaining ones of the plurality of first slice walls and the one or more second slice walls to form a plurality of second hard mask patterns;
- and
- patterning the plurality of line shape structures using the plurality of second hard mask patterns.
13 more elements
A method for defining a line pattern to have a length, the method comprising:
- providing a plurality of line patterns on a substrate, the plurality of line patterns horizontally extending in a first direction;
- providing a mask material layer on the substrate including the plurality of line patterns;
- forming a plurality of first slice walls using a self-aligned double patterning (SADP), the plurality of first slice walls horizontally extending in a second direction different from the first direction;
- providing one or more second slice walls between one or more pairs of adjacent ones of the plurality of first slice walls exposed by a plurality of fill mask patterns, a first side of the plurality of fill mask patterns extending along the second direction and aligned to central positions of corresponding ones of the plurality of first slice walls, respectively;
- removing one or more of the plurality of first slice walls exposed by a trim mask patterns, the trim mask pattern including one or more openings such that a first side of the one or more openings extending along the second direction and aligned to central positions of corresponding ones of the one or more second slice walls, respectively;
- patterning the mask material layer using remaining ones of the plurality of first slice walls and the one or more second slice walls as a plurality of hard mask patterns;
- and
- patterning the plurality of line patterns to have the length using the plurality of hard mask patterns.
5 more elements
Dependencies are inferred from the claim text.