Methods of fabricating integrated circuit devices

A method of fabricating an integrated circuit device, the method comprising:

• forming a layer on a substrate;
• forming a plurality of sacrificial spacers on the layer, wherein the plurality of sacrificial spacers expose a plurality of portions of the layer;
• forming a spacer layer comprising a plurality of first portions and a plurality of second portions, wherein each of the plurality of first portions extends on a respective one of sidewalls of the plurality of sacrificial spacers, and each of the plurality of second portions overlaps one of the plurality of portions of the layer, and wherein the spacer layer defines a plurality of spacer layer recesses, and one of the plurality of spacer layer recesses is between two adjacent ones of the plurality of sacrificial spacers;
• forming a plurality of protective patterns in the plurality of spacer layer recesses, respectively, wherein each of the plurality of protective patterns overlaps a respective one of the plurality of second portions of the spacer layer;
• removing upper portions of the spacer layer to expose the plurality of sacrificial spacers while the plurality of protective patterns is overlapping the plurality of second portions of the spacer layer, respectively;
• removing the plurality of sacrificial spacers to expose a plurality of first etch regions of the layer;
• removing the plurality of protective patterns to expose the plurality of second portions of the spacer layer;
• removing the plurality of second portions of the spacer layer to expose a plurality of second etch regions of the layer to form a plurality of spacers, wherein the plurality of second etch regions are spaced apart from the plurality of first etch regions, and each of the plurality of spacers comprises a portion of a respective one of the plurality of first portions of the spacer layer;
• and
• etching the plurality of first etch regions and the plurality of second etch regions of the layer by using the plurality of spacers as an etch mask.

A method of fabricating an integrated circuit device, the method comprising:

• forming a layer on a substrate, wherein the layer comprises a first portion formed on a first region of the substrate and a second portion formed on a second region of the substrate, and wherein the layer comprises a first material;
• forming a blocking film extending on the second portion of the layer;
• forming a plurality of sacrificial spacers on the first portion of the layer and a first covering layer on the second portion of the layer, wherein the plurality of sacrificial spacers are spaced apart from each other and define a plurality of sacrificial spacer recesses exposing a plurality of exposed portions of the layer, respectively, wherein the plurality of sacrificial spacers comprise the first material, and wherein the first covering layer extends on at least a portion of the blocking film and comprises the first material;
• forming a spacer layer on the first portion of the layer and a second covering layer on the second portion of the layer, wherein the spacer layer comprises a plurality of first portions and a plurality of second portions, wherein each of the plurality of first portions of the spacer layer extends on a respective one of sidewalls of the plurality of sacrificial spacers, and each of the plurality of second portions of the spacer layer overlaps a respective one of the plurality of exposed portions of the layer, wherein the spacer layer defines a plurality of spacer layer recesses between two adjacent ones of the plurality of sacrificial spacers, and wherein the second covering layer extends on at least a portion of the first covering layer;
• forming a plurality of protective patterns in the plurality of spacer layer recesses, respectively, wherein one of the plurality of protective patterns overlaps one of the plurality of second portions of the spacer layer;
• removing upper portions of the spacer layer while the plurality of protective patterns is overlapping the plurality of second portions of the spacer layer;
• removing the plurality of sacrificial spacers to expose a plurality of first etch regions of the layer;
• removing the plurality of protective patterns to expose the plurality of second portions of the spacer layer;
• removing the plurality of second portions of the spacer layer to expose a plurality of second etch regions of the layer and to form a plurality of spacers, wherein the plurality of second etch regions are spaced apart from the plurality of first etch regions, and the plurality of spacers comprise portions of the plurality of first portions of the spacer layer, respectively;
• and
• etching the plurality of first etch regions and the plurality of second etch regions of the layer to form a plurality of patterns in the first region of the layer using the plurality of spacers as an etch mask while the blocking film is overlapping the second region of the layer.