# US 2019/0198338 A1 · Uniform euv photoresist patterning utilizing pulsed plasma process

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2019/0198338 A1
- Document ID: US20190198338A1
- Status: Published application
- Kind: A1
- Application number: 15/853,243
- Filed: 2017-12-22
- Published: 2019-06-27
- Earliest claimed: 2017-12-22
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Sang Wook KIM; Zhibin WANG; Kyoungjin LEE; Byungkook KONG
- Web page: https://patentgrep.com/patent/US20190198338A1

## CPC

- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 50/28: of insulating materials
- H10P 50/283: {by chemical means}
- H10P 50/73: {using masks for insulating materials}
- H10P 76/2041: {Photolithographic processes}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiments of the present disclosure generally provide a method and apparatus for forming features in a material layer utilizing EUV technologies. In one embodiment, a method of patterning a substrate includes disposing a patterned photoresist layer on a mask layer disposed on a substrate, wherein the patterned photoresist layer has openings with different widths defined in the patterned photoresist layer, forming a compensatory layer along sidewalls of the patterned photoresist layer to modify the widths of the openings and etching the mask layer through the openings with the modified width.

## Claims

### Claim 1

A method of patterning a substrate, comprising:
disposing a patterned photoresist layer on a mask layer disposed on a substrate, wherein the patterned photoresist layer has openings with different widths defined in the patterned photoresist layer;
forming a compensatory layer along sidewalls of the patterned photoresist layer to modify the widths of the openings; and
etching the mask layer through the openings with the modified width.

### Claim 2 (depends on 1)

The method of claim 1, wherein forming the compensatory layer further comprises:
forming the compensatory layer with different thicknesses on different sidewalls of the patterned photoresist layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the openings formed between the patterned photoresist layer has substantially the same width after the compensatory layer is formed on the sidewalls of the patterned photoresist layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the compensatory layer is formed by supplying a deposition gas mixture into a processing chamber where the substrate is positioned.

### Claim 5 (depends on 4)

The method of claim 4, wherein the deposition gas mixture comprises a silicon containing gas and an oxygen containing layer.

### Claim 6 (depends on 5)

The method of claim 5, wherein the compensatory layer is a silicon oxide layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein the compensatory layer is formed from a first material different from a second material selected to form the mask layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the compensatory layer and the mask layer are both dielectric layers.

### Claim 9 (depends on 1)

The method of claim 1, wherein the substrate further comprises a material layer disposed between the mask layer and the substrate.

### Claim 10 (depends on 9)

The method of claim 9, wherein the material layer is fabricated from a dielectric material different from the mask layer.

### Claim 11 (depends on 1)

The method of claim 1, further comprising:
forming a gapfill layer in openings defined in the etched mask layer and covering an upper surface of the etched mask layer.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
etching a portion of the gapfill layer disposed on the etched mask layer along with the etched mask layer; and
forming pillar type structures on the substrate.

### Claim 13 (depends on 11)

The method of claim 11, wherein the gapfill layer is fabricated from a dielectric layer different from the mask layer.

### Claim 14 (depends on 12)

The method of claim 12, wherein the pillar type structures formed on the substrate have substantially similar width.

### Claim 15 (depends on 1)

The method of claim 1, wherein the patterned photoresist layer is an organic resist layer used for EUV applications.

### Claim 16

A method for forming uniform patterned photoresist layer on a substrate, comprising:
forming a compensatory layer along sidewalls of a patterned photoresist layer to compensate critical dimension mismatch from the patterned photoresist layer; and
forming openings in the patterned photoresist layer with substantially the same width.

### Claim 17 (depends on 16)

The method of claim 16, wherein the compensatory layer is a dielectric layer.

### Claim 18 (depends on 16)

The method of claim 16, wherein the patterned photoresist layer is organic resist layer used for EUV applications.

### Claim 19 (depends on 16)

The method of claim 16, wherein the compensatory layer has different thicknesses along different sidewalls of the patterned photoresist layer.

### Claim 20

A method for forming pillar type structures on a substrate, comprising:
forming a gapfill layer in openings defined by a patterned mask layer disposed on a substrate, the gapfill layer covering an upper surface of the patterned mask layer; and
removing a portion of the gapfill layer above the upper surface of the patterned mask layer along with the gapfill layer formed in the openings defined by the patterned mask layer; and
forming the pillar type structures on the substrate.