Semiconductor device and semiconductor device manufacturing method

Abstract

The present invention aims to improve the accuracy and stability when removing an insulating film at a bottom of a TSV to allow a through hole to open toward a connection target electrode. A semiconductor device manufacturing method including: forming a through hole in a semiconductor substrate by using anisotropic etching performed from a first surface side of the semiconductor substrate; forming a thin film being an insulating film on an entire inner surface of the through hole; forming a carbon-containing thin film using plasma deposition on the first surface including an opening edge portion of the through hole; engraving an inner bottom of the through hole by using anisotropic plasma etching with the carbon-containing thin film as a mask; removing the carbon-containing thin film by ashing; and forming a through-substrate electrode in the through hole.

Dependencies are inferred from the claim text.