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US 2019/0198334 A1Published application
Method of fabricating a metal layer
AssigneeUnited Microelectronics Corp.
InventorsShouguo Zhang, Hai Tao Liu, Ming Hua Du, Yen-Chen Chen
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Abstract
A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.
Claims13
1:
- A method of fabricating a metal layer, comprising:
- providing a conductive layer, a metal compound contacting a top surface of the conductive layer, a dielectric layer covering the conductive layer, and a trench disposed in the dielectric layer, the metal compound being exposed through the trench;
- performing a first re-sputtering on the metal compound and the dielectric layer with inert ions and metal ions, wherein the metal compound is removed entirely during the first re-sputtering;
- after the first re-sputtering, forming a barrier covering the trench, wherein the barrier is formed in a chamber;
- performing a second re-sputtering on the barrier with the inert ions and the metal ions, wherein the barrier at a bottom of the trench is entirely removed during the second re-sputtering and the second re-sputtering is performed in the chamber;
- and
- forming a metal layer in the trench.
4 more elements
2:
- The method of fabricating a metal layer of claim 1, wherein the metal ions used in the first re-sputtering and the second re-sputtering are both formed from a metal target and a metal plate, the metal target and the metal plate comprises a metal, and the barrier comprises the same metal in the metal target.
3:
- The method of fabricating a metal layer of claim 1, wherein during the first re-sputtering, the metal ions bombard the surface of the dielectric layer and turn into metal atoms to deposited onto the surface of the dielectric layer.
4:
- The method of fabricating a metal layer of claim 1, further comprising:
- before the second re-sputtering, nitriding part of the barrier.
5:
- The method of fabricating a metal layer of claim 1, further comprising:
- after performing a second re-sputtering, performing a flash process to remove residue on the barrier formed during the second re-sputtering;
- and
- after the flash process and before forming the metal layer, forming a seed layer on the barrier.
1 more element
6:
- The method of fabricating a metal layer of claim 1, wherein the metal layer comprises copper or aluminum, the inert ions are argon ions, and the metal atoms are tantalum ions.
7:
- The method of fabricating a metal layer of claim 1, wherein the conductive layer comprises tungsten, copper, aluminum, tantalum nitride.
8:
- The method of fabricating a metal layer of claim 1, wherein the metal compound comprises tungsten oxide, copper oxide, aluminum oxide, or tantalum oxynitride.
9:
- The method of fabricating a metal layer of claim 1, wherein the conductive layer serves as a top electrode of a resistive random-access memory.
10:
- The method of fabricating a metal layer of claim 1, wherein both the first re-sputtering and the second re-sputtering are performed within a chamber comprising:
- a DC coil power connecting a metal plate on a sidewall of the chamber;
- an RF coil power connecting the metal plate;
- and
- a DC power connecting a metal target at a top of the chamber.
2 more elements
11:
- The method of fabricating a metal layer of claim 10, wherein a DC coil power in the first re-sputtering is higher than a DC coil power in the second re-sputtering.
12:
- The method of fabricating a metal layer of claim 10, wherein an RF coil power in the first re-sputtering is higher than an RF coil power in the second re-sputtering.
13:
- The method of fabricating a metal layer of claim 10, wherein a DC power in the first re-sputtering is higher than a DC power in the second re-sputtering.