Methods of processing semiconductor device structures and related systems

A method of processing a semiconductor device structure, comprising:

• generating a plasma of a gas;
• cooling an electrostatic chuck on which a semiconductor device structure is positioned to a temperature of about −30° C. or less, the semiconductor device structure comprising tiers of alternating materials including at least one dielectric material;
• applying a low frequency radio frequency having a non-sinusoidal waveform to the electrostatic chuck;
• and
• forming an opening in the semiconductor device structure with the plasma.

A system for processing a semiconductor device structure, comprising:

• a chamber;
• an electrode in the chamber;
• at least a DC power source operably coupled to the electrode;
• an electrostatic chuck located in the chamber below the electrode and configured to receive a semiconductor device structure thereon;
• a coolant system operably coupled to the electrostatic chuck and configured to reduce the electrostatic chuck to a temperature of about −30° C. or less;
• and
• at least one low frequency radio frequency (RF) power source coupled to the electrostatic chuck, the low frequency RF power source configured to generate a frequency of between about 100 Hz and about 3.2 MHz exhibiting a non-sinusoidal waveform comprising a combination of a plurality of sinusoidal waveforms.