Substrate processing apparatus, method of manufacturing semiconductor device and non-transistory computer-readable recording medium

A method of manufacturing a semiconductor device using a substrate processing apparatus comprising:

• a process chamber where a substrate is processed;
• a heating device configured to heat the substrate by electromagnetic waves;
• a gas supply mechanism comprising a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the process chamber;
• and a plasma generator configured to excite the hydrogen-containing gas by plasma, the method comprising:
• (a) loading the substrate into the process chamber;
• (b) adding hydrogen atom to a surface of the substrate by supplying the hydrogen-containing gas excited by the plasma generator onto the substrate;
• and
• (c) modifying the substrate where hydrogen atom is added by intermittently supplying the electromagnetic waves into the process chamber by the heating device.

A non-transitory computer-readable recording medium storing a program used for a substrate processing apparatus comprising:

• a process chamber where a substrate is processed;
• a heating device configured to heat the substrate by electromagnetic waves;
• a gas supply mechanism comprising a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the process chamber;
• and a plasma generator configured to excite the hydrogen-containing gas by plasma, wherein the program causes the substrate processing apparatus to perform:
• (a) loading the substrate into the process chamber;
• (b) adding hydrogen atom to a surface of the substrate by supplying the hydrogen-containing gas excited by the plasma generator onto the substrate;
• and
• (c) modifying the substrate where hydrogen atom is added by intermittently supplying the electromagnetic waves into the process chamber by the heating device.