SONOS Stack With Split Nitride Memory Layer
AssigneeCypress Semiconductor Corporation
InventorsFredrick B. Jenne, Krishnaswamy Ramkumar
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Abstract
A semiconductor device and method of manufacturing the same are provided. In one embodiment, method includes forming a first oxide layer over a substrate, forming a silicon-rich, oxygen-rich, oxynitride layer on the first oxide layer, forming a silicon-rich, nitrogen-rich, and oxygen-lean nitride layer over the oxynitride layer, and forming a second oxide layer on the nitride layer. Generally, the nitride layer includes a majority of charge traps distributed in the oxynitride layer and the nitride layer. Optionally, the method further includes forming a middle oxide layer between the oxynitride layer and the nitride layer. Other embodiments are also described.
Claims16
1-18. (canceled)
A semiconductor device, comprising:
- a first oxide layer abutting a semiconductor structure;
- a second oxide layer abutting a gate layer;
- and
- a charge-trapping region disposed between the first and second oxide layers, wherein the charge-trapping region comprises at least first and second nitride layers, and wherein the second nitride layer includes a majority of charge traps in the charge-trapping region.
A method of fabricating a semiconductor device, comprising:
- forming a first oxide layer abutting a semiconductor structure;
- forming a first nitride layer abutting the first oxide layer;
- oxidizing at least a portion of the first nitride layer to form a second oxide layer;
- and
- forming a second nitride layer abutting the second oxide layer, wherein the first nitride layer comprises a higher oxygen concentration than the second nitride layer.
Dependencies are inferred from the claim text.