Laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device

A laser irradiation apparatus comprising:

• a laser generating device configured to generate a laser beam;
• a flotation unit configured to cause a workpiece to float, the workpiece being to be irradiated with the laser beam;
• and
• a conveying unit configured to convey the floating workpiece, wherein
• the flotation unit includes first to fourth regions over which the workpiece is conveyed,
• the conveying unit includes
• a first conveying unit configured to convey the workpiece from the first region to the second region,
• a second conveying unit configured to convey the workpiece from the second region to the third region,
• a third conveying unit configured to convey the workpiece from the third region to the fourth region, and
• a fourth conveying unit configured to convey the workpiece from the fourth region to the first region,
• the workpiece is irradiated with the laser beam while the workpiece is being conveyed from the first region to the second region, and
• the first conveying unit conveys the workpiece with the first conveying unit holding the workpiece at a position where the first conveying unit does not overlap an irradiation position of the laser beam as viewed in a plan view.

A laser irradiation apparatus comprising:

• a laser generating device configured to generate a laser beam;
• a flotation unit configured to cause a workpiece to float, the workpiece being to be irradiated with the laser beam;
• and
• a conveying unit configured to convey the workpiece, wherein
• the workpiece has a quadrangular planar shape with four sides,
• the conveying unit includes a holding mechanism configured to hold the workpiece,
• the holding mechanism holds only one of the four sides of the workpiece, and
• the holding mechanism is located at a position where the holding mechanism is not irradiated with the laser beam while the workpiece is being conveyed.

A laser irradiation method of conveying a workpiece with first to fourth conveying units while causing the workpiece to float with the use of a flotation unit and irradiating the workpiece with a laser beam, wherein

• the workpiece is conveyed from a first region to a second region with the use of the first conveying unit,
• the workpiece is conveyed from the second region to a third region with the use of the second conveying unit,
• the workpiece is conveyed from the third region to a fourth region with the use of the third conveying unit,
• the workpiece is conveyed from the fourth region to the first region with the use of the fourth conveying unit,
• the workpiece is irradiated with the laser beam while the workpiece is being conveyed from the first region to the second region, and
• the first conveying unit conveys the workpiece with the first conveying unit holding the workpiece at a position where the first conveying unit does not overlap an irradiation position of the laser beam as viewed in a plan view.

A method of manufacturing a semiconductor device, the method comprising steps of:

• (a) forming an amorphous film on a substrate;
• and
• (b) irradiating the amorphous film with a laser beam to crystallize the amorphous film, wherein
• the step of (b) is a step of conveying the substrate with the a conveying unit while causing the substrate to float with the use of a flotation unit and irradiating the amorphous film with the laser beam,
• the conveying unit conveys the substrate with the conveying unit holding the substrate at a position where the conveying unit does not overlap an irradiation position of the laser beam as viewed in a plan view, and
• after the substrate is conveyed with the use of the conveying unit and the substrate is irradiated with the laser beam, the substrate is rotated with the use of a rotating mechanism provided on the flotation unit with the rotating mechanism holding a horizontal surface of the substrate, and the substrate is conveyed again to be irradiated with the laser beam.

A method of manufacturing a semiconductor device, the method comprising steps of:

• (a) forming an amorphous film on a substrate;
• and
• (b) irradiating the amorphous film with a laser beam to crystallize the amorphous film, wherein
• the step of (b) is a step of conveying the substrate with first to fourth conveying units while causing the substrate to float with the use of a flotation unit and irradiating the amorphous film with the laser beam,
• the substrate is conveyed from a first region to a second region with the use of the first conveying unit,
• the substrate is conveyed from the second region to a third region with the use of the second conveying unit,
• the substrate is conveyed from the third region to a fourth region with the use of the third conveying unit,
• the substrate is conveyed from the fourth region to the first region with the use of the fourth conveying unit,
• the substrate is irradiated with the laser beam while the substrate is being conveyed from the first region to the second region, and
• the first conveying unit conveys the substrate with the first conveying unit holding the substrate at a position where the first conveying unit does not overlap an irradiation position of the laser beam as viewed in a plan view.

A method of manufacturing a semiconductor device, the method comprising steps of:

• (a) forming an amorphous film on a substrate;
• and
• (b) irradiating the amorphous film with a laser beam to crystallize the amorphous film, wherein
• the step of (b) is a step of conveying the substrate with a conveying unit while causing the substrate to float with the use of a flotation unit and irradiating the amorphous film with the laser beam,
• the substrate has a quadrangular planar shape with four sides,
• the conveying unit includes a holding mechanism configured to hold the substrate, and
• the holding mechanism holds only one of the four sides of the substrate and holds the substrate at a position where the substrate is not irradiated with the laser beam while the substrate is being conveyed.