Methods for manufacturing semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJung Han Lee, Byoung-gi Kim, Jong Pil Kim, Kihwan Lee
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Abstract
A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- performing a first ion implantation process on a substrate to form a lower dopant region in the substrate;
- patterning the substrate having the lower dopant region to form active patterns;
- and
- performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns,
- wherein the lower dopant region and the upper dopant region have a same conductivity type.
A method for manufacturing a semiconductor device, the method comprising:
- performing a first ion implantation process on a substrate;
- forming mask patterns on the substrate;
- etching the substrate using the mask patterns as etch masks to form trenches;
- forming a device isolation layer in the trenches;
- and
- performing a second ion implantation process on the substrate,
- wherein the first ion implantation process is performed at a higher power than the second ion implantation process.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first lower dopant region in a first region of a substrate;
- patterning the first region having the first lower dopant region to form first active patterns;
- forming a first upper dopant region in an upper portion of respective ones of the first active patterns;
- and
- forming a first source/drain pattern in the upper portion of the respective ones of the first active patterns,
- wherein a conductivity type of the first source/drain pattern is different from a conductivity type of the first upper dopant region.
Dependencies are inferred from the claim text.