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US 2019/0198321 A1Published application
Film forming method
AssigneeTokyo Electron Limited
InventorsYoshihide KIHARA, Takahiro YOKOYAMA
Life of this patent
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Abstract
A film forming method includes placing a substrate formed with a pattern on a pedestal provided in a space configured to perform a plasma processing therein under a reduced pressure environment; supplying radio-frequency electric power using an upper electrode disposed to face the pedestal in the space; and repeatedly executing a sequence including forming a film on the pattern of the substrate and cleaning the space by supplying electric power only to the upper electrode so as to generate plasma in the space.
Claims18
A film forming method comprising:
- placing a substrate formed with a pattern on a pedestal provided in a space configured to perform a plasma processing therein under a reduced pressure environment;
- supplying radio-frequency electric power using an upper electrode disposed to face the pedestal in the space;
- and
- repeating a sequence including forming a film on the pattern of the substrate and cleaning the space by supplying electric power only to the upper electrode so as to generate plasma in the space.
1 more element
A processing method comprising:
- providing a substrate on a pedestal in a space within a chamber;
- forming a film on the substrate by atomic layer deposition;
- cleaning the space by generating a plasma in the space;
- and
- repeating the forming and the cleaning several times.
2 more elements
Dependencies are inferred from the claim text.