Methods Of Forming A Channel Region Of A Transistor And Methods Used In Forming A Memory Array

A method of forming a channel region of a transistor, comprising:

• forming amorphous channel material over a substrate, the amorphous channel material having first and second opposing sides;
• forming a first insulating material adjacent the second side of the amorphous channel material below a crystallization temperature at and above which the amorphous channel material would become crystalline, the first insulating material having first and second opposing sides, the first side of the first insulating material being adjacent the second side of the amorphous channel material;
• forming a second insulating material of different composition from that of the first insulating material adjacent the second side of the first insulating material;
• and
• subjecting the amorphous channel material having the first insulating material there-adjacent to a temperature at or above the crystallization temperature to transform the amorphous channel material into crystalline channel material.

A method used in forming a memory array, comprising:

• forming an assembly comprising a vertical stack comprising alternating tiers of different composition materials, one of the different composition materials and corresponding of the alternating tiers being insulative, the assembly comprising a hollow tube of amorphous channel material extending elevationally through the stack;
• forming a hollow tube of insulator material adjacent a radially-inner side of the hollow tube of the amorphous channel material below a crystallization temperature at and above which the amorphous channel material would become crystalline;
• and
• subjecting the amorphous channel material having the insulator material there-adjacent to a temperature at or above the crystallization temperature to transform the amorphous channel material into crystalline channel material.

A method used in forming a memory array, comprising:

• forming an assembly comprising a vertical stack comprising alternating tiers of different composition materials, one of the different composition materials and corresponding of the alternating tiers being insulative, the assembly comprising a hollow tube of amorphous channel material extending elevationally through the stack;
• forming a hollow tube of first insulating material adjacent a radially-inner side of the hollow tube of the amorphous channel material below a crystallization temperature at and above which the amorphous channel material would become crystalline;
• forming a hollow tube of second insulating material adjacent a radially-inner side of the hollow tube of the first insulating material;
• subjecting the amorphous channel material having the first insulating material there-adjacent to a temperature at or above the crystallization temperature to transform the amorphous channel material into crystalline channel material.