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US 2019/0198319 A1Published application
Lateral semiconductor nanotube with hexagonal shape
AssigneeInternational Business Machines Corporation
InventorsJuntao Li, Kangguo Cheng, Peng Xu, Choonghyun Lee
Life of this patent
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Abstract
A method of forming a semiconductor structure includes forming one or more fins disposed on a substrate, rounding surfaces of the one or more fins, forming faceted sidewalls from the rounded surfaces of the one or more fins, and forming a lateral semiconductor nanotube shell on the faceted sidewalls. The lateral semiconductor nanotube shell comprises a hexagonal shape.
Claims20
A method of forming a semiconductor structure, comprising:
- forming one or more fins disposed on a substrate;
- rounding surfaces of the one or more fins;
- forming faceted sidewalls from the rounded surfaces of the one or more fins;
- and
- forming a lateral semiconductor nanotube shell on the faceted sidewalls;
- wherein the lateral semiconductor nanotube shell comprises a hexagonal shape.
3 more elements
A semiconductor structure, comprising:
- a substrate;
- and
- a lateral semiconductor nanotube shell disposed on a top surface of the substrate;
- wherein the lateral semiconductor nanotube shell comprises a hexagonal shape.
1 more element
An integrated circuit comprising:
- a lateral nanotube transistor comprising:
- a substrate;
- and
- a lateral semiconductor nanotube shell disposed on a top surface of the substrate;
- wherein the lateral semiconductor nanotube shell comprises a hexagonal shape.
2 more elements
Dependencies are inferred from the claim text.