Methods For Depositing Blocking Layers on Conductive Surfaces
AssigneeApplied Materials, Inc.
InventorsBhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
Life of this patent
Estimating the term…
Abstract
Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
Claims20
A method of selectively depositing a blocking layer, the method comprising exposing a substrate comprising a conductive material having a first surface and a dielectric material having a second surface to a gaseous alkyl phosphonic acid to selectively form a blocking layer on the first surface over the second surface and form a blocked first surface, the alkyl phosphonic acid comprising at least one compound with a general formula RP(O)(OR″)2, where R is selected from C4-C20 alkyl, perfluoroalkyl, alkenyl or alkynyl groups and each R″ is independently selected from H, C1-C12 alkyl or aryl.
A method of selectively depositing a blocking layer, the method comprising exposing a substrate comprising a conductive material having a first surface and a dielectric material having a second surface to a hydrazide to selectively form a blocking layer on the first surface over the second surface and form a blocked first surface, the hydrazide comprising at least one compound with a general formula RC(O)NHNR′2, where R is selected from C4-C20 alkyl, perfluoroalkyl, alkenyl or alkynyl groups and each R′ is independently selected from H or C1-C4 alkyl or can join together to form a ring comprising 2 to 5 carbon atoms.
Dependencies are inferred from the claim text.