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US 2019/0198313 A1Published application
Flexible Single-Crystal Semiconductor Heterostructures and Methods of Making Thereof
AssigneeUniversity of Houston System
InventorsJae-Hyun Ryou, Shahab Shervin
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Abstract
Discussed herein are systems and methods for fabrication of flexible electronic structures via direct growth of two-dimensional materials on metal foil and the direct growth of 2D materials on any substrate including polycrystalline, single crystal, and amorphous substrates, that may employ an adhesion layer of, for example, a Cu or Ni film, formed directly on the substrate prior to formation of subsequent layers.
Claims20
A method of fabricating a semiconductor device comprising:
- forming, via chemical vapor deposition, a 2D material on a substrate, wherein the substrate comprises Si (100), a metallic foil, or an inorganic flexible substrate.
A method of fabricating a semiconductor structure comprising:
- forming a catalyst layer in contact with a substrate;
- forming a 2D material layer on the catalyst layer;
- forming an AlN layer on the 2D material layer;
- forming a buffer layer on the AlN layer;
- and
- forming at least one semiconductor layer on the buffer layer.
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A semiconductor structure comprising:
- a substrate;
- a layer of 2D material in contact with the substrate;
- a first buffer layer on the 2D material layer;
- a second buffer layer on the first buffer layer;
- and
- a plurality of semiconductor layers grown epitaxially on the second buffer layer.
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Dependencies are inferred from the claim text.