Plasma Processing Apparatus and Methods

A plasma processing apparatus, the plasma processing apparatus comprising:

• a processing chamber,
• a pedestal disposed in the processing chamber, the pedestal operable to support a workpiece;
• a plasma chamber disposed above the processing chamber in a vertical direction, the plasma chamber comprising a dielectric sidewall, the dielectric sidewall having a cylindrical shape;
• a separation grid separating the processing chamber from the plasma chamber;
• a dielectric window forming a portion of a ceiling of the processing chamber, the dielectric window flaring outward in a horizontal direction from the plasma chamber;
• a first plasma source proximate the dielectric sidewall, the first plasma source operable to generate a remote plasma in the plasma chamber;
• a second plasma source proximate the dielectric window, the second plasma source operable to generate a direct plasma in the processing chamber.

A plasma processing apparatus, comprising:

• a processing chamber,
• a pedestal disposed in the processing chamber, the pedestal operable to support a workpiece;
• a plasma chamber disposed above the processing chamber in a vertical direction, the plasma chamber comprising a dielectric sidewall, the dielectric sidewall having a cylindrical shape;
• a separation grid separating the processing chamber from the plasma chamber;
• a first plasma source proximate the dielectric sidewall, the first plasma source operable to generate a remote plasma in the plasma chamber;
• a second plasma source, the second plasma source operable to generate a direct plasma in the processing chamber, the second plasma source comprising an RF bias electrode associated with the pedestal, the RF bias electrode operable to generate the direct plasma in the processing chamber when the RF bias electrode is energized with RF energy from an RF bias source.