Plasma Processing Apparatus and Method of Manufacturing Semiconductor Device Using the Same

A plasma processing apparatus, comprising:

• a chamber;
• a window in the chamber;
• an antenna for generating plasma, wherein the antenna is disposed on the window and in the chamber;
• and
• a power supply for delivering power to the antenna, wherein the power supply comprises a power feed,
• wherein the power feed passes through the antenna and extends to the window, and wherein the window has a central groove receiving an end of the power feed.

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate into a lower housing of a chamber;
• and
• processing the substrate using a microwave power output provided through an antenna and a window that are in an upper housing on the lower housing,
• wherein processing the substrate comprises:
• pumping a first gas between the lower housing and the window;
• pumping a second gas on the window and in the upper housing;
• and
• generating a plasma of the first gas by providing the antenna with the microwave power output from a power supply,
• wherein pumping the second gas comprises exhausting the second gas independently of the power supply.