Test system and method of operating the same
AssigneeNanya Technology Corporation
InventorKUNG-MING FAN
Life of this patent
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Abstract
The present disclosure provides a test system, and a method of operating the same. The test system is for testing a DRAM (dynamic random access memory). The DRAM includes an array including a first memory row and a second memory row. The first memory row includes a first word line. The second memory row includes a second word line and a test cell. The second word line is immediately adjacent to the first word line. The test cell is controllable by the second word line. The test system includes a work station. The work station is configured to evaluate a row hammer effect on the second memory row based on a leakage charge, caused by an AC component of a pulse applied to the first word line, from the test cell.
Claims20
A test system for testing a DRAM (dynamic random access memory), the DRAM including an array, the array including a first memory row and a second memory row, the first memory row including a first word line, the second memory row including a second word line and a test cell, the second word line immediately adjacent to the first word line, the test cell controllable by the second word line, the test system comprising:
- a work station configured to evaluate a row hammer effect on the second memory row based on a leakage charge, caused by an AC component of a pulse applied to the first word line, from the test cell.
A method, comprising:
- applying a pulse to a first word line of a memory array;
- and
- evaluating a row hammer effect on a second word line of the memory array based on a leakage charge, caused by an AC component of the pulse, from a test cell,
- wherein the second word line is immediately adjacent to the first word line, and wherein the test cell is controllable by the second word line.
Dependencies are inferred from the claim text.