Non-volatile memory device and method of blank check

A memory device, comprising:

• a plurality of complementary memory cells, each including a true transistor and a complementary transistor;
• a processing element coupled to the plurality of complementary memory cells, configured to;
• detect a cell current of each of the true and complementary transistors by applying a predetermined gate voltage thereon;
• generate an upper cell current value, wherein a first predetermined amount of the true and complementary transistors have greater cell currents than the upper cell current value;
• generate a lower cell current value, wherein a second predetermined amount of the true and complementary transistors have less cell currents than the lower cell current value;
• generate a cell current range based on the upper and lower cell current values;
• generate a first binary state indicator based on a comparison of the cell current range and a threshold value;
• and
• a plurality of sensing devices configured to determine a binary state of each of the plurality of complementary memory cells.

A non-transitory computer readable storage medium comprising stored instructions thereon, the instructions When executed cause a processing element to:

• execute a blank check of N x complementary memory cells, each complementary memory cell includes a true cell and a complementary cell, the blank check further includes;
• detecting a state value of each of the true and complementary cells;
• generating an upper state value, wherein a first predetermined amount of the true and complementary cells have greater state values than the upper state value;
• generating a lower state value, wherein a second predetermined amount of the true and complementary cells have less state values than the upper state value;
• generating a state value range based on the upper state value and the lower state value;
• and
• generating a first blank state indicator based on a comparison between the state value range to a threshold value, wherein the first blank state indicator verifies the N x complementary memory cells is in a blank state when the state value range is less than the threshold value, and the N x complementary cells is in a non-blank state when the state value range is greater than the threshold value.