Inspection method for memory integrity, nonvolatile memory and electronic device

A non-volatile memory, comprising:

• a memory array, comprising a plurality of memory cells;
• and
• a control circuit, coupled to the memory array,
• wherein the control circuit performs memory data integrity inspection to obtain a threshold voltage of at least one memory cell to-be-inspected among the memory cells, determines a data value belonging to the at least one memory cell to-be-inspected by comparing a read voltage and the threshold voltage, sets a preset voltage according to the data value when the data value belonging to the at least one memory cell to-be-inspected is determined, obtains an offset data value belonging to the at least one memory cell to-be-inspected by comparing the preset voltage and the threshold voltage of the at least one memory cell to-be-inspected and determines whether the data value and the offset data value belonging to the at least one memory cell to-be-inspected are the same, so as to determine whether an integrity of the memory cell to-be-inspected is defective.

An electronic device, comprising:

• a non-volatile memory, comprising a memory array and a status register;
• and
• a controller, coupled to the non-volatile memory,
• wherein the controller sends a data integrity diagnosis command to the non-volatile memory, sends a first data read command to the non-volatile memory to obtain status data of the status register and to determine whether the non-volatile memory completes the data integrity diagnosis command according to a busy bit in the status data, when the data integrity diagnosis command is completed, the controller sends a second data read command to the non-volatile memory to obtain an integrity verification bit in the status data of the status register and to determine whether an integrity of a plurality of memory cells in the memory array is defective according to the integrity verification bit,
• wherein the non-volatile memory, when receiving the data integrity diagnosis command, obtains a threshold voltage of at least one memory cell to-be-inspected in the non-volatile memory, determines a data value belonging to the at least one memory cell to-be-inspected by comparing a read voltage and the threshold voltage, the non-volatile memory sets a preset voltage according to the data value when the data value belonging to the at least one memory cell to-be-inspected is determined, obtains an offset data value belonging to the at least one memory cell to-be-inspected by comparing the preset voltage and the threshold voltage of the at least one memory cell to-be-inspected and determines whether the data value and the offset data value belonging to the at least one memory cell to-be-inspected are the same, so as to determine whether an integrity of the memory cell to-be-inspected is defective.