Nonvolatile memory device and method of programming in the same

A method of programming in a nonvolatile memory device, comprising:

• providing a memory block comprising a first sub block below a stopper layer and a second sub block above the stopper layer where the memory block includes a plurality of cell strings each comprising a plurality of memory cells connected in series and disposed in a vertical direction;
• providing a plurality of intermediate switching transistors disposed in the stopper layer;
• turning on one or more intermediate switching transistors in a selected cell string when a selected word line corresponding to a program address is included in the first sub block during a program operation;
• and
• turning off the one or more intermediate switching transistors in the selected cell string when the selected word line is included in the second sub block during the program operation.

A nonvolatile memory device comprising:

• a memory block divided into a plurality of sub blocks and including a plurality of cell strings each comprising a plurality of memory cells connected in series and disposed in a vertical direction;
• a plurality of intermediate switching transistors disposed in a boundary portion between two adjacent sub blocks in the vertical direction;
• and
• a control circuit configured to selectively turn on one or more intermediate switching transistors in a selected cell string independently of intermediate switching transistors in unselected cell strings based on a program address during a program operation.