Phase change memory device
AssigneeSK hynix Inc.
InventorJung Hyuk YOON
Life of this patent
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Abstract
A phase change memory device may be provided. The phase change memory device may include a plurality of Mats, a row control block and a column control block. The row control block may be provided to each of the Mats to control word lines. The column control block may be provided to each of the Mats to control bit lines. When a near phase change memory cell adjacent to the row control block and the column control block is selected, the phase change memory cells located at different positions, which may be spaced apart from the near phase change memory cell, in the Mats except for a reference Mat may be selected.
Claims8
A phase change memory device comprising:
- a plurality of Mats including a plurality of memory cell;
- and
- a control block configured to receive address form a controller, to generate a first address based on the address and a second address obtained to change the address, and to select a memory cell of a reference Mat of the plurality of Mats based on the first address and a memory cell of a non-reference Mats based on the second address.
Dependencies are inferred from the claim text.