Memory device write circuitry
AssigneeMicron Technology, Inc.
InventorHarish N. Venkata
Life of this patent
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Abstract
Devices and methods include, for a memory device, generating a main input-output line signal on a main input-output line using driving circuitry. The main input-output line is coupled to multiple sensing amplifiers. Each of the sensing amplifiers each locally generate a local data line from the main data line. Each of the sensing amplifiers also includes multiple local sensing amplifiers that are selectively coupled to the generated local data line for overwriting data in the respective local sensing amplifiers.
Claims20
A memory device comprising:
- a main input-output line;
- driving circuitry configured to generate a main input-output signal on the main input-output line;
- and
- a plurality of sensing amplifier coupled to the main input-output line and each configured to be written to or transmit data over the main input-output line, wherein each sensing amplifier comprises:
- a local data line;
- local data line generation circuitry configured to generate a local data signal on the local data line;
- and
- a plurality of local sensing amplifiers coupled to the local data line generation circuitry via the local data line.
The memory device of claim 8, wherein the driving circuitry is configured to set the main input-output signal based on a data signal.
A semiconductor device comprising:
- a main data line;
- a main false line, wherein the main false line is complementary to the main data line;
- driving circuitry configured to generate a main data line signal on the main data line and a main false signal on the main false line;
- and
- a plurality of sensing amplifiers coupled to the main data line and the main false line, wherein each of the plurality of sensing amplifiers is configured to be written to or transmit data over the main data line and the main false line, wherein each sensing amplifier comprises:
- a local data line;
- a local false line that is complementary to the local data line;
- local data line generation circuitry configured to generate:
- a local data signal on the local data line;
- and
- a local false signal on the local false line;
- and
- a plurality of local sensing amplifiers coupled to the local data line generation circuitry via the local data line and the local false line.
A method comprising
- receiving a main data line from driving circuitry;
- receiving a main bar line from the driving circuitry;
- locally generating a local data line at local data line generation circuitry of a sensing amplifier of a plurality of sensing amplifiers coupled to the main data line;
- locally generating a local bar line at the local data line generation circuitry of the sensing amplifier;
- and
- using the local data line and the local bar line to overwrite a local sensing amplifier of a plurality of local sensing amplifiers of the sensing amplifier.
Dependencies are inferred from the claim text.