Read threshold adjustment using reference data
AssigneeWestern Digital Technologies, Inc.
InventorsSALIL KALE, SHREEJITH KV, ANEESH PUTHOOR, GOPU S, NARAYAN K
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Abstract
Apparatuses, systems, and methods are disclosed for read threshold adjustment using reference data for non-volatile memory. An apparatus may include an array of non-volatile memory cells and a controller. A controller may be configured to write a predetermined reference data pattern to a region of an array. A controller may be configured to read reference data from a region. A controller may be configured to set one or more read thresholds based on identifying differences between reference data and a predetermined reference data pattern.
Claims20
An apparatus comprising:
- an array of non-volatile memory cells;
- and
- a controller configured to:
- write a predetermined reference data pattern to a region of the array;
- read reference data from the region;
- and
- set one or more read thresholds based on identifying differences between the reference data and the predetermined reference data pattern.
A method comprising:
- acquiring a current state of a test pattern in an array of non-volatile memory;
- identifying differences between the current state and a previous state for the test pattern;
- and
- adjusting read thresholds for a portion of the array of non-volatile memory associated with the test pattern based on the identified differences.
An apparatus comprising:
- means for reading at least one cell of a non-volatile memory array;
- means for identifying errors associated with at least an erase state and a highest state of a plurality of data states;
- and
- means for adjusting read thresholds based on the identified errors.
Dependencies are inferred from the claim text.