Defect inspection method and apparatus
AssigneeHitachi Power Solutions Co., Ltd.
InventorsKaoru SAKAI, Osamu KIKUCHI, Kenji SAHARA
Life of this patent
Estimating the term…
Loading patent…
AssigneeHitachi Power Solutions Co., Ltd.
InventorsKaoru SAKAI, Osamu KIKUCHI, Kenji SAHARA
Estimating the term…
In an ultrasonic inspection performed on an inspection object including a fine and multi-layer structure such as a semiconductor wafer and a MEMS wafer, a defect is detected by: separating a defect present inside from a normal pattern; obtaining an image of the inspection object by imaging the inspection object having a pattern formed thereon to enable a highly sensitive detection; generating a reference image that does not include a defect from the obtained image of the inspection object; generating a multi-value mask for masking a non-defective pixel from the obtained image of the inspection object; calculating a defect accuracy by matching the brightness of the image of the inspection object and the reference image; and comparing the calculated defect accuracy with the generated multi-value mask.
A defect inspection method comprising the steps of:
A defect inspection apparatus comprising:
An ultrasonic inspection apparatus comprising:
Dependencies are inferred from the claim text.