Lithography mask with a black border region and method of fabricating the same

A method of fabricating a lithography mask, comprising:

• forming a reflective structure over a substrate;
• forming an absorber layer over the reflective structure;
• defining a first region of the lithography mask, wherein the defining of the first region includes patterning the absorber layer;
• and
• defining a second region of the lithography mask, wherein the second region is defined to surround the first region in a top view, and wherein the defining of the second region includes forming a substantially non-reflective material in the second region.

A method of performing a lithography process, comprising:

• receiving a lithography mask, the lithography mask including:
• a first region and a second region that surrounds the first region in a top view, wherein the first region includes a patterned absorber layer located over a reflective multi-layer structure, and wherein the second region includes a substantially non-reflective material;
• and
• performing an extreme ultraviolet (EUV) lithography process using the lithography mask.