Euv mask blank, photomask manufactured by using the euv mask blank, lithography apparatus using the photomask and method of fabricating semiconductor device using the photomask
AssigneeSamsung Electronics Co., Ltd.
InventorsHo Yeon KIM, Seong Chul HONG, Seong Sue KIM
Life of this patent
Estimating the term…
Abstract
An extreme ultraviolet (EUV) mask blank is provided. The EUV mask blank includes a substrate having a first surface and a second surface opposed to each other, a reflective layer having first reflective layers and second reflective layers alternately stacked on the first surface of the substrate, a capping layer on the reflective layer, and a hydrogen absorber layer between the reflective layer and the capping layer, the hydrogen absorber layer configured to store hydrogen and being in contact with the capping layer.
Claims21
An extreme ultraviolet (EUV) mask blank comprising:
- a substrate comprising a first surface;
- a reflective layer comprising first reflective layers and second reflective layers alternately stacked on the first surface of the substrate;
- a capping layer on the reflective layer;
- and
- a hydrogen absorber layer between the reflective layer and the capping layer, the hydrogen absorber layer configured to store hydrogen and being in contact with the capping layer.
An extreme ultraviolet (EUV) mask blank comprising:
- a low thermal expansion material (LTEM) substrate comprising a first surface;
- a reflective layer comprising a molybdenum (Mo)/silicon (Si) multilayer on the first surface of the LTEM substrate;
- a first absorber layer on the reflective layer, the first absorber layer comprising a transition metal and comprising at least one of titanium (Ti), vanadium (V), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zirconium (Zr), molybdenum (Mo), palladium (Pd), hafnium (Hf), tantalum (Ta), rhodium (Rh), or gold (Au);
- a capping layer on the first absorber layer, the capping layer comprising ruthenium (Ru) or a ruthenium compound;
- and
- a second absorber layer on the capping layer opposite the first absorber layer.
A photomask comprising:
- a substrate comprising a first surface and a second surface opposed to each other;
- a reflective layer, comprising a molybdenum (Mo)/silicon (Si) multilayer, on the first surface of the substrate;
- a capping layer on the reflective layer;
- a hydrogen absorber layer between the reflective layer and the capping layer, the hydrogen absorber layer configured to store hydrogen and being in contact with the capping layer;
- a light absorption pattern on the capping layer, the light absorption pattern comprising an opening for passing extreme ultraviolet light therethrough;
- and
- a conductive coating film on the second surface of the substrate.
-25. (canceled)
Dependencies are inferred from the claim text.