Active matrix substrate, method for producing active matrix substrate, and liquid crystal display device
AssigneeSharp Kabushiki Kaisha
InventorsChia-Hui HSU, Junichi MORINAGA, Katsuya OGAWA
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Abstract
The present invention provides a technology which allows ensuring a high level of reliability and achieving a high aperture ratio. An active matrix substrate includes: a drain electrode extension section connected to a drain electrode of a switching element and made of an oxide semiconductor which has been made conductive; and a storage capacitor electrode overlapping with at least a portion of the drain electrode extension section, at least a portion of the storage capacitor electrode being light-transmissive.
Claims5
An active matrix substrate comprising:
- a plurality of pixels arranged in matrix;
- a plurality of gate wires;
- a plurality of source wires intersecting with the plurality of gate wires;
- a switching element including (i) a gate electrode connected to a corresponding one of the plurality of gate wires and (ii) a source electrode connected to a corresponding one of the plurality of source wires;
- a drain electrode extension section connected to a drain electrode of the switching element, the drain electrode extension section being made of an oxide semiconductor which has been made conductive;
- and
- a storage capacitor electrode overlapping with at least a portion of the drain electrode extension section, at least a portion of the storage capacitor electrode being light-transmissive.
A method for producing an active matrix substrate, comprising:
- a first step of forming a storage capacitor electrode layer;
- a second step of forming a gate insulating film layer on the storage capacitor electrode layer so that the gate insulating film layer covers the storage capacitor electrode layer;
- and
- a third step of forming a drain electrode extension section layer on the gate insulating film layer so that the drain electrode extension section layer overlaps with at least a portion of the storage capacitor electrode layer,
- the drain electrode extension section layer being made of an oxide semiconductor which has been made conductive,
- at least a portion of the storage capacitor electrode layer being light-transmissive.
Dependencies are inferred from the claim text.