US 2019/0196231 A1Published application

Semiconductor device

AssigneeRenesas Electronics Corporation

InventorsTohru KAWAI, Shinichi WATANUKI, Yasutaka NAKASHIBA

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Abstract

The performances of a semiconductor device are improved. The semiconductor device includes an insulation layer, an optical waveguide part formed over the insulation layer, and including a p type semiconductor region and an n type semiconductor region formed therein, and an interlayer insulation film formed over the insulation layer in such a manner as to cover the optical waveguide part. At the first portion of the optical waveguide part, in a cross sectional view perpendicular to the direction of extension of the optical waveguide part, the n type semiconductor region is arranged at the central part of the optical waveguide part, and the p type semiconductor region is arranged in such a manner as to surround the entire circumference of the n type semiconductor region.

Claims20

Dependent claims

A semiconductor device, comprising:

a first insulation film;
a first optical waveguide part formed over the first insulation film;
and
a second insulation film formed over the first insulation film in such a manner as to cover the first optical waveguide part,
wherein in the first optical waveguide part, a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type different from the first conductivity type are formed,
wherein at a first portion of the first optical waveguide part, in a cross sectional view perpendicular to the direction of extension of the first optical waveguide part, the first semiconductor region is arranged at the central part of the first optical waveguide part, and the second semiconductor region is arranged in such a manner as to surround the entire circumference of the first semiconductor region.

3 more elements

Dependencies are inferred from the claim text.