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US 2019/0196110 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeRenesas Electronics Corporation
InventorsYasutaka NAKASHIBA, Shinichi WATANUKI
Life of this patent
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Abstract
An optical waveguide formed at the same layer as that of a microscopic optical device and a spot size converter largely different in size are integrally formed. A semiconductor device has an optical waveguide part functioning as a spot size converter. The optical waveguide part includes a plurality of optical waveguide bodies penetrating through an interlayer insulation layer in the thickness direction.
Claims18
A semiconductor device, comprising:
- an insulation layer;
- an optical waveguide formed over the insulation layer;
- a first interlayer insulation layer formed over the insulation layer in such a manner as to cover the optical waveguide;
- a second interlayer insulation layer formed over the first interlayer insulation layer;
- and
- an optical waveguide part having a plurality of first optical waveguide bodies penetrating through the first interlayer insulation layer in the thickness direction and separated from one another, and a plurality of second optical waveguide bodies penetrating through the second interlayer insulation layer in the thickness direction and separated from one another, the optical waveguide part having one end arranged in such a manner as to cover one end of the optical waveguide, and the other end including a light receiving surface for receiving an external light and capable of propagating the light therethrough.
3 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) providing a semiconductor wafer having a plurality of element formation regions formed of an insulation layer and a semiconductor layer formed over the insulation layer, and adjacent to one another;
- (b) patterning the semiconductor layer, and thereby forming an optical waveguide in each of the element formation regions;
- (c) forming a first interlayer insulation layer over the insulation layer in such a manner as to cover the optical waveguide;
- (d) forming a plurality of first through parts penetrating through the first interlayer insulation layer in the thickness direction, and separated from one another in the first interlayer insulation layer in each of the element formation regions;
- and
- (e) burying a film having a higher refractive index than the refractive index of the first interlayer insulation layer in each inside of the first through parts, and forming a first optical waveguide part capable of propagating a light through the inside thereof,
- wherein one end of the first optical waveguide part is arranged in such a manner as to cover one end of the optical waveguide, and
- wherein the other end of the first optical waveguide part includes a light receiving surface for receiving the light from the outside.
5 more elements
A semiconductor device, comprising:
- an insulation layer;
- an optical waveguide formed over the insulation layer;
- an interlayer insulation layer formed over the insulation layer in such a manner as to cover the optical waveguide;
- and
- an optical waveguide part having a plurality of optical waveguide bodies penetrating through the interlayer insulation layer in the thickness direction and separated from one another, the optical waveguide part being arranged such that one end thereof covers one end of the optical waveguide, and including the light receiving surface for receiving an external light at the other end thereof, and capable of propagating the light therethrough,
- wherein the optical waveguide bodies include:
- the optical waveguide bodies overlapping the optical waveguide in a plan view;
- and
- the optical waveguide bodies separated from the optical waveguide in a plan view.
6 more elements
Dependencies are inferred from the claim text.