Method of manufacturing wire grid polarization element
AssigneeSeiko Epson Corporation
InventorYoshitomo KUMAI
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Abstract
In a manufacturing process of a wire grid polarization element, a metal film, a light absorption film, and an inorganic material film for hard mask are sequentially formed, and then a resist mask is formed using nanoimprinting. Next, the metal film is patterned into a plurality of wire-shaped metal layers by dry etching. The resist mask is remaining at the bottom portion of the concave portion interposed between the adjacent convex portions. Δt/P (%), which is obtained by dividing, by the pitch P (nm), the difference Δt (nm) between the maximum value and the minimum value of the thickness t (nm) of the residual film of the resist mask remaining at the bottom portion of the concave portion, is rendered to be 13.4% or less.
Claims16
A method of manufacturing a wire grid polarization element including a wire grid configured as a plurality of wire-shaped metal layers arranged in parallel to each other at an equal pitch on one surface of a substrate,
- the method comprising:
- film-forming a metal film and an inorganic material film for hard mask sequentially on one surface of a mother substrate that is larger than the substrate;
- forming a resist mask after the film-forming, where a resist layer is coated on one side of the mother substrate, then a mold material for nanoimprinting is pressed against the resist layer to form, in the resist layer, a plurality of convex portions arranged in parallel to each other at a pitch equivalent to a pitch of the plurality of wire-shaped metal layers, and thereafter the resist layer is cured to form the resist mask;
- performing dry etching with the resist mask formed, and thus performing a patterning of the metal film to form the plurality of wire-shaped metal layers;
- and
- dividing the mother substrate into a plurality of wire grid polarization elements, wherein
- the forming a resist mask includes
- leaving the resist mask at a bottom portion of a concave portion interposed between adjacent convex portions of the plurality of convex portions, and Δt/P (%) is 13.4% or less
- where a thickness of the resist mask remaining at the bottom portion of the concave portion is defined as t (nm), a difference between a maximum value and a minimum value of the thickness t is defined as Δt (nm), and the pitch is defined as P (nm).
A method of manufacturing a wire grid polarization element including a wire grid configured as a plurality of wire-shaped metal layers arranged in parallel to each other at an equal pitch on one surface of a substrate,
- the method comprising:
- film-forming a metal film and an inorganic material film for hard mask sequentially on one surface of a mother substrate that is larger than the substrate;
- forming a resist mask after the film-forming, where a resist layer is coated on one side of the mother substrate, then a mold material for nanoimprinting is pressed against the resist layer to form, in the resist layer, a plurality of convex portions arranged in parallel to each other at a pitch equivalent to a pitch of the plurality of wire-shaped metal layers, and thereafter the resist layer is cured to form the resist mask;
- performing dry etching with the resist mask formed, and thus performing a patterning of the metal film to form the plurality of wire-shaped metal layers;
- and
- dividing the mother substrate into a plurality of wire grid polarization elements, wherein
- the forming a resist mask includes
- leaving the resist mask at a bottom portion of a concave portion interposed between adjacent convex portions of the plurality of convex portions, and
- a pitch P (nm) and a difference Δt meet following conditional formula:
- Δt≤(0.14×p−0.3)
- where a thickness of the resist mask remaining at the bottom portion of the concave portion is defined as t (nm), a difference between a maximum value and a minimum value of the thickness t is defined as Δt (nm), and the pitch is defined as P (nm).
Dependencies are inferred from the claim text.