METHOD OF PROCESSING SiC SINGLE CRYSTAL AND METHOD OF MANUFACTURING SiC INGOT
AssigneeShowa Denko K.K.
InventorYohei FUJIKAWA
Life of this patent
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Abstract
A method of processing a SiC single crystal includes a measuring step of measuring a shape of an atomic arrangement plane of the SiC single crystal along at least a first direction passing through a center in plan view and a second direction orthogonal to the first direction; and a surface processing step of processing a first plane serving as an attachment plane of the SiC single crystal, in which the surface processing step includes a grinding step of grinding the first plane, and in the grinding step, a difference is given to a surface state between the first plane and a second plane facing the first plane, and the atomic arrangement plane is flattened by Twyman's effect.
Claims20
A method of processing a SiC single crystal, comprising:
- a measuring step of measuring a shape of an atomic arrangement plane of a SiC single crystal having a first plane and a second plane along at least a first direction passing through a center in plan view and a second direction orthogonal to the first direction;
- and
- a surface processing step of processing the first plane serving as an attachment plane of the SiC single crystal,
- wherein the surface processing step includes a grinding step of grinding the first plane, and
- wherein in the grinding step, a difference is given to a surface state between the first plane and the second plane facing the first plane, and the atomic arrangement plane is flattened by Twyman's effect.
Dependencies are inferred from the claim text.